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S1 · SIMULATION

Chip junction temperature

Steady-state conduction through an AMB stack

Junction temperature Tj

125.6°C

Equivalent source node

Rth,j-f
0.606K/W
ΔT
60.6K
Explore parameters
Temperature°C
65.0125.6

Illustrative field · local temperatures unvalidated.

Thickness direction enlarged for clarity

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Thermal resistance breakdown

0.606 K/W

Explore parameters

Fixed chip: 5 × 5 × 0.18 mm, conductivity 370 W/(m·K).

100
50W500
65
25°C85
15000
2000W/(m²·K)20000

Placeholder analytical model

Steady state and ideal interfaces. An equivalent resistance network estimates conduction and heat spreading. The separate FEM-surrogate option uses trained numerical results.

Tj,max and Tj,avg represent the same equivalent source node. This model does not resolve the true chip-surface peak or area-average temperature.

Validation status

Default analytical benchmark: 125.564 °C and 0.605642 K/W. This reference formula is approximate; the FEM option reports its own errors. No experimental validation.

The color field combines Chebyshev radial attenuation and vertical layer interpolation for illustration. It is not a FEM or validated local-temperature field. Thicknesses are exaggerated by different factors; parameter values define the physical geometry.

175 °C is a common reference limit for some SiC devices. Use the specific device datasheet to determine its permitted junction temperature.